Theoretical study of time-resolved Raman scattering profiles of hot electrons in semiconductors

C. Chia*, Otto F. Sankey, K. T. Tsen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

11 引文 斯高帕斯(Scopus)

摘要

A comprehensive time-resolved electronic Raman scattering theory for nonequilibrium carrier excitations in semiconductors is presented. The following are simultaneously taken into account: (i) the effects of the ultrashort laser pulse for probing the excited carrier distribution function; (ii) the fact that the fluctuation-dissipation theorem is not valid under conditions of nonequilibrium carrier distributions; (iii) the effects of quasiparticle life time via a finite collision time in the Raman scattering cross section; and (iv) the effect of the time-dependent resonant enhancement factor due to the band structure. The single-particle scattering spectra for spin-density fluctuation contribution is found to be significantly broadened by an ultrashort laser pulse, but is substantially narrowed by the finite collision time. The effect of the time-dependent resonant enhancement factor has been demonstrated to broaden the line shape of single-particle scattering spectra for the spin-density fluctuation contribution as the probe photon energy increases.

原文英語
頁(從 - 到)4325-4335
頁數11
期刊Journal of Applied Physics
72
發行號9
DOIs
出版狀態已發佈 - 1992

ASJC Scopus subject areas

  • 物理與天文學 (全部)

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