The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu; S. T. Chang; R. S. Syu; K. W. Shen; M. H. Lee

doi:10.1109/EDSSC.2007.4450177

The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu^*, S. T. Chang, R. S. Syu, K. W. Shen, M. H. Lee

^*此作品的通信作者

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

摘要

We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si₃N₄, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

原文	英語
主出版物標題	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面	523-526
頁數	4
DOIs	https://doi.org/10.1109/EDSSC.2007.4450177
出版狀態	已發佈 - 2007
事件	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, 臺灣持續時間: 2007 12月 20 → 2007 12月 22

出版系列

名字	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

其他

其他	IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區	臺灣
城市	Tainan
期間	2007/12/20 → 2007/12/22

ASJC Scopus subject areas

電氣與電子工程
電子、光磁材料

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10.1109/EDSSC.2007.4450177

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Liu, Y. T., Chang, S. T., Syu, R. S., Shen, K. W., & Lee, M. H. (2007). The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (頁 523-526). 文章 4450177 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450177

The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. / Liu, Y. T.; Chang, S. T.; Syu, R. S. 等.
IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. 2007. p. 523-526 4450177 (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

研究成果: 書貢獻/報告類型 › 會議論文篇章

Liu, YT, Chang, ST, Syu, RS, Shen, KW & Lee, MH 2007, The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007., 4450177, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, 頁 523-526, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007, Tainan, 臺灣, 2007/12/20. https://doi.org/10.1109/EDSSC.2007.4450177

@inproceedings{6fd17b16240e435b982c1410df21afa0,

title = "The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application",

abstract = "We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.",

keywords = "A-Si:H TFT, Stress, Thermal conduction layers, Thermal conductivity",

author = "Liu, {Y. T.} and Chang, {S. T.} and Syu, {R. S.} and Shen, {K. W.} and Lee, {M. H.}",

year = "2007",

doi = "10.1109/EDSSC.2007.4450177",

language = "English",

isbn = "1424406374",

series = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

pages = "523--526",

booktitle = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007",

note = "IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 ; Conference date: 20-12-2007 Through 22-12-2007",

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AU - Liu, Y. T.

AU - Chang, S. T.

AU - Syu, R. S.

AU - Shen, K. W.

AU - Lee, M. H.

PY - 2007

Y1 - 2007

N2 - We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

AB - We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

KW - A-Si:H TFT

KW - Stress

KW - Thermal conduction layers

KW - Thermal conductivity

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DO - 10.1109/EDSSC.2007.4450177

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AN - SCOPUS:43049168500

SN - 1424406374

SN - 9781424406371

T3 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

SP - 523

EP - 526

BT - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

T2 - IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Y2 - 20 December 2007 through 22 December 2007

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The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

摘要

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