The thermal accumulated improvement of a-Si:H flexible electronics for AMOLED application

Y. T. Liu*, S. T. Chang, R. S. Syu, K. W. Shen, M. H. Lee

*此作品的通信作者

    研究成果: 書貢獻/報告類型會議論文篇章

    摘要

    We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si3N4, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.

    原文英語
    主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
    頁面523-526
    頁數4
    DOIs
    出版狀態已發佈 - 2007 十二月 1
    事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, 臺灣
    持續時間: 2007 十二月 202007 十二月 22

    出版系列

    名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

    其他

    其他IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
    國家/地區臺灣
    城市Tainan
    期間2007/12/202007/12/22

    ASJC Scopus subject areas

    • 電氣與電子工程
    • 電子、光磁材料

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