The temperature dependence of key electro-optical characteristics for mid-infrared emitting quantum cascade lasers

Dan Botez*, Jae Cheol Shin, Sushil Kumar, Jeremy Kirch, Chun Chieh Chang, Luke J. Mawst, Igor Vurgaftman, Jerry R. Meyer, Alfredo Bismuto, Borislav Hinkov, Jerome Faist

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

30 引文 斯高帕斯(Scopus)

摘要

The equations for the threshold-current density Jth, differential quantum efficiency ?d and maximum wallplug efficiency ηwp,max for quantum-cascade lasers (QCLs) have been modified for electron leakage and backfilling. We used a thermalexcitation model of "hot" injected electrons from the upper laser state to upper active-region energy states to calculate leakage currents. Then the calculated characteristic temperature T0 for Jth was found to agree well with experiment for both conventional and deep-well QCLs. The characteristic temperature T 1 for ηd was deduced to be due to both electron leakage and an increase in the waveguide-loss coefficient. For conventional mid-infrared QCLs ηwp,maxis found to be strongly temperature dependent which explains experimental data. By using a new concept: tapered active-region (TA), deep-well QCLs have been optimized for virtual suppression of the electron-leakage currents. In turn, at room temperature, for continuous-wave (CW)-operating, 4.5-5.0 μm-emitting TA QCLs we estimate the threshold current to decrease by ∼ 25 %, the active-region temperature rise at the ηwp,max point to decrease by ∼ 30 %, and the single-ended, ηwp,max value to become at least 22 %. Preliminary results from TA QCLs include T1 values as high as 454 K, over the 20-60 °C heatsink-temperature range.

原文英語
主出版物標題Novel In-Plane Semiconductor Lasers X
DOIs
出版狀態已發佈 - 2011
對外發佈
事件Novel In-Plane Semiconductor Lasers X - San Francisco, CA, 美国
持續時間: 2011 1月 252011 1月 28

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
7953
ISSN(列印)0277-786X

會議

會議Novel In-Plane Semiconductor Lasers X
國家/地區美国
城市San Francisco, CA
期間2011/01/252011/01/28

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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