摘要
Spherical gallium arsenic nanoparticles prepared by thermal evaporation method have been fabricated successfully. The structural and optical properties of GaAs nanoparticles are studied in detail. It is found that while the growth pressure rises from 0.4 to 5 Torr, the average size of GaAs nanoparticles increases from 6 to 12 nm and standard deviation keeps almost the same (∼2 nm) except for 0.5 Torr. By using transmission electron microscopy and Raman spectra, a critical preparation condition has been found which characterize the amorphous to crystal transition of GaAs nanoparticles.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 415-419 |
| 頁數 | 5 |
| 期刊 | Journal of Nanoparticle Research |
| 卷 | 6 |
| 發行號 | 4 |
| DOIs | |
| 出版狀態 | 已發佈 - 2004 8月 |
ASJC Scopus subject areas
- 生物工程
- 一般化學
- 原子與分子物理與光學
- 建模與模擬
- 一般材料科學
- 凝聚態物理學
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