The simulation analysis of MOSFET channel stress for different oxide/nitride/oxide (ONO) spacer thicknesses

J. Y. Chen, Z. H. Chen, K. C. Lin, Ming-Jenq Twu, Y. H. Hung, P. Y. Chou, G. T. Chen, Y. S. Liu, Chuan-Hsi Liu

研究成果: 書貢獻/報告類型會議論文篇章

摘要

It is demonstrated that the strained-Si can enhance the channel stress with the contact etching stop layer (CESL) stressor. In addition to CESL, this article also includes ONO spacer and investigates the impact of ONO spacer thickness on the channel stress. It is found that the channel stress increases when the nitride thickness of the ONO spacer increases. On the other hand, the stress distribution is simulated and analyzed for the devices with or without CESL stressor. Generally speaking, based on the simulation results, the channel stress of MOSFET devices increases when the nitride stressor of ONO spacer and/or CESL increases.

原文英語
主出版物標題Materials Science and Chemical Engineering
頁面436-439
頁數4
DOIs
出版狀態已發佈 - 2013
事件2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , 新加坡
持續時間: 2013 二月 202013 二月 21

出版系列

名字Advanced Materials Research
699
ISSN(列印)1022-6680

其他

其他2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
國家新加坡
期間2013/02/202013/02/21

ASJC Scopus subject areas

  • Engineering(all)

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