The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

Min Hung Lee; Kuan Fu Chen; Chang Chi Lai; Chee Wee Liu; Woei Wu Pai; Miin Jang Chen; Ching Fuh Lin

doi:10.1143/jjap.41.l326

The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

Min Hung Lee^*, Kuan Fu Chen, Chang Chi Lai, Chee Wee Liu, Woei Wu Pai, Miin Jang Chen, Ching Fuh Lin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10^-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.

原文	英語
頁（從 - 到）	L326-L328
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	41
發行號	3 B
DOIs	https://doi.org/10.1143/jjap.41.l326
出版狀態	已發佈 - 2002 3月 15
對外發佈	是

ASJC Scopus subject areas

一般工程
一般物理與天文學

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10.1143/jjap.41.l326

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@article{0109becc363a4fff8677e9f1fcd7daba,

title = "The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake",

abstract = "The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.",

keywords = "Electroluminescence, Electron-hole plasma recombination, External quantum efficiency, Metal oxide silicon diode, Roughness",

author = "Lee, {Min Hung} and Chen, {Kuan Fu} and Lai, {Chang Chi} and Liu, {Chee Wee} and Pai, {Woei Wu} and Chen, {Miin Jang} and Lin, {Ching Fuh}",

year = "2002",

month = mar,

day = "15",

doi = "10.1143/jjap.41.l326",

language = "English",

volume = "41",

pages = "L326--L328",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 B",

}

TY - JOUR

T1 - The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

AU - Lee, Min Hung

AU - Chen, Kuan Fu

AU - Lai, Chang Chi

AU - Liu, Chee Wee

AU - Pai, Woei Wu

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

PY - 2002/3/15

Y1 - 2002/3/15

N2 - The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.

AB - The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.

KW - Electroluminescence

KW - Electron-hole plasma recombination

KW - External quantum efficiency

KW - Metal oxide silicon diode

KW - Roughness

UR - http://www.scopus.com/inward/record.url?scp=0037088514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037088514&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.l326

DO - 10.1143/jjap.41.l326

M3 - Article

AN - SCOPUS:0037088514

SN - 0021-4922

VL - 41

SP - L326-L328

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 B

ER -

The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

摘要

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