The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.
|頁（從 - 到）||L326-L328|
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||已發佈 - 2002 三月 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)