The roughness-enhanced light emission from metal-oxide-silicon light-emitting diodes using very high vacuum prebake

Min Hung Lee*, Kuan Fu Chen, Chang Chi Lai, Chee Wee Liu, Woei Wu Pai, Miin Jang Chen, Ching Fuh Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2 × 10-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.

原文英語
頁(從 - 到)L326-L328
期刊Japanese Journal of Applied Physics, Part 2: Letters
41
發行號3 B
DOIs
出版狀態已發佈 - 2002 三月 15
對外發佈

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學(雜項)
  • 物理與天文學 (全部)

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