The role of oxygen vacancies on switching characteristics of TiOx resistive memories

Z. W. Zheng, H. H. Hsu, P. C. Chen, C. H. Cheng*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

Using oxygen vacancy rich (VO-rich) TiOx dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the Ni/VO-rich TiOx/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiOx after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.

原文英語
頁(從 - 到)4431-4434
頁數4
期刊Journal of Nanoscience and Nanotechnology
15
發行號6
DOIs
出版狀態已發佈 - 2015 六月 1

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 生物醫學工程
  • 材料科學(全部)
  • 凝聚態物理學

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