@article{85520a1eb6c241dda040e3523949ac29,
title = "The role of carbon on performance of strained-Si:C surface channel NMOSFETs",
abstract = "Carbon incorporation in strained-Si surface channel NMOSFET is investigated. Due to the ∼52% lattice mismatch between silicon and carbon, the channel is expected to have higher strain than strained-Si, indicating that the carrier mobility can be enhanced significantly. There is a ∼40% electron mobility enhancement for incorporated carbon content of 0.25% in strained-Si NMOSFETs compared to unstrained Si channels. The performance of channels with increased strain is not as high as theoretical predictions. This is due to the large Dit at the oxide/strained-Si:C interface and alloy scattering, which degrades carrier mobility enhancement.",
keywords = "Alloy scattering, Carbon incorporation, Sheet resistance, Strain",
author = "Lee, {M. H.} and Chang, {S. T.} and S. Maikap and Huang, {C. F.}",
note = "Funding Information: The authors are very grateful for discussion with Prof. C.W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, and support by National Science Council (NSC 96-2112-M-003-013), National Nano Device Laboratories (NDL), and Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute (EOL/ITRI), Taiwan. Our gratitude also goes to the academic Paper Editing Clinic, NTNU. ",
year = "2008",
month = oct,
doi = "10.1016/j.sse.2008.06.017",
language = "English",
volume = "52",
pages = "1569--1572",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "10",
}