The reliability study and device modeling for p-HEMT microwave power transistors

S. L. Liu*, H. M. Chang, T. Chang, H. L. Kao, C. H. Cheng, A. Chin

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the deembedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress.

原文英語
主出版物標題State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
發行者Electrochemical Society Inc.
頁面175-187
頁數13
版本6
ISBN(電子)9781607682608
ISBN(列印)9781566779067
DOIs
出版狀態已發佈 - 2011
對外發佈
事件State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, 美国
持續時間: 2011 10月 92011 10月 14

出版系列

名字ECS Transactions
號碼6
41
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
國家/地區美国
城市Boston, MA
期間2011/10/092011/10/14

ASJC Scopus subject areas

  • 工程 (全部)

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