摘要
Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 224-228 |
| 頁數 | 5 |
| 期刊 | Journal of Crystal Growth |
| 卷 | 135 |
| 發行號 | 1-2 |
| DOIs | |
| 出版狀態 | 已發佈 - 1994 1月 |
ASJC Scopus subject areas
- 凝聚態物理學
- 無機化學
- 材料化學
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