Large size single crystals of RuTe2 were prepared by the chemical transport method with ICl3 as transport agent. As confirmed by X-ray investigations, the specimens crystallize with the pyrite structure. The stoichiometry of selected single crystals is discussed. The electrical resistivity and Hall effect measurements have shown n-type degenerate semiconducting behavior. The optical absorption measurements indicate that RuTe2 is an indirect semiconductor. The energy gap according to the Burstein-Moss shift has been determined to be 0.39 ± 0.01 eV.
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