The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO2 high-k metal gate 28nm CMOS devices

P. C. Wu, E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

研究成果: 書貢獻/報告類型 › 會議論文篇章

3 引文 斯高帕斯（Scopus）

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