The observation of BTI-induced RTN traps in inversion and accumulation modes on HfO2 high-k metal gate 28nm CMOS devices

P. C. Wu, E. R. Hsieh, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

A comprehensive analysis on the BTI induced RTN traps in high-k(HK) CMOS devices have been investigated in inversion (inv.) and accumulation (acc.) modes. The combination of two modes for RTN measurement provides a wide range of energy window in high-k gate dielectric, in which a simple extraction method of RTN analysis has been adopted to analyze the gate dielectric dual-layer of advanced HK devices. The results show that inversion mode measurement can only identify the RTN traps in the channel region, which is related to the V th degradation. While, accumulation mode may detect the traps inside the gate-drain overlap region which provides better understanding of GIDL current. This basic understanding is of critical important to the quality development of HK gate dielectrics in advanced CMOS technologies.

原文英語
主出版物標題Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
發行者IEEE Computer Society
ISBN(列印)9781479922178
DOIs
出版狀態已發佈 - 2014
事件2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, 臺灣
持續時間: 2014 四月 282014 四月 30

出版系列

名字Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

其他

其他2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
國家臺灣
城市Hsinchu
期間14/4/2814/4/30

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Science Applications

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