@article{30c735f43f4d48c1aeae6c04d8f64d23,
title = "The investigation of selective pre-pattern free self-assembled Ge nano-dot formed by excimer laser annealing",
abstract = "Localized Ge nano-dot formation by laser treatment was investigated and discussed in terms of strain distribution. The advantage of this technique is patterning localization of nano-dots without selective epitaxial growth, reducing costs and improving throughput. Self-assembled Ge nano-dots produced by excimer laser annealing statistically distributed dot density and size dependent on laser energy. Improvement in the crystallization quality of the dots was also studied, and a strain analysis was undertaken.",
keywords = "Excimer laser, Re-crystallization, Self-assembled",
author = "Lee, {Min Hung} and Chen, {Pin Guang}",
note = "Funding Information: The authors are very grateful for the UHV-CVD support from Prof. C. W. Liu, Graduate Institute of Electronics Engineering, National Taiwan University, funding support by National Science Council, (NSC 98-2221-E-003-020-MY3, 101-2221-E-003-019), and National Taiwan Normal University (NTNU100-D-01), and experimental support by Display Technology Center (DTC), Industrial Technology Research Institute (ITRI), Taiwan.",
year = "2012",
doi = "10.1186/1556-276X-7-307",
language = "English",
volume = "7",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
}