The Investigation for Thickness-Dependent Electrical Performance on BaTiO3 /BiFeO3 Bilayer Ferromagnetic Capacitors

Chin Lien*, Cho Fan Hsieh, Teng Chun Wu, Chan Shan Yang, Min Hung Lee, Jing Jhang Xu, Chen Wei Hu, Comet Huang, Shou Zen Chang, Ming Han Liao*


研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)


Bilayer barium titanate (BaTiO3 , BTO)/bismuth ferrite (BiFeO3 , BFO) capacitive devices were fabricated and systematically analyzed from the aspects of thin-film material crystallography and electrical characterization. The tetragonal phase (T) of BTO with the reducing thickness (150 nm) was demonstrated through carefully adjusting the conditions of sputtering process and post-thermal treatments. The thickness dependence of polarization, energy density, permittivity, and leakage current was investigated in the BTO/BFO bilayer system. It showed that 150-nm BFO film is an optimal thickness, which led to the substantial increase in energy density up to 920 mJ/cm 3 with the charge/discharge efficiency of 79.7% at 10 V. The permittivity of 150-nm BFO bilayer device was found to be 258, which is much higher than the single -layer BFO and other BTO/BFO devices with different BFO thicknesses. Leakage current could be reduced by three orders with the increasing thickness of BFO layer from 30 to 225 nm. In addition, the leakage current of BTO/BFO bilayer capacitors was 10 2 times lower than BFO single layer with the same total thickness. The result showed that the leakage current of BFO material could be significantly reduced in the bilayer system. The performance of BTO/BFO bilayer capacitors indicates that it is a promising technique for the implementation of nanoscale, lead-free, and nonelectrochemical thin-film energy storage-related applications.

頁(從 - 到)3417-3423
期刊IEEE Transactions on Electron Devices
出版狀態已發佈 - 2020 8月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程


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