The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs

M. H. Lee, S. T. Chang, S. Maikap, C. Y. Yu, C. W. Liu

    研究成果: 書貢獻/報告類型會議貢獻

    原文英語
    主出版物標題Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
    2006
    出版狀態已發佈 - 2006 十二月 1
    事件Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, 美国
    持續時間: 2006 五月 152006 五月 17

    其他

    其他Third International SiGe Technology and Device Meeting, ISTDM 2006
    國家美国
    城市Princeton, NJ
    期間06/5/1506/5/17

    ASJC Scopus subject areas

    • Computer Science(all)
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

    引用此

    Lee, M. H., Chang, S. T., Maikap, S., Yu, C. Y., & Liu, C. W. (2006). The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs. 於 Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest (卷 2006). [1715972]