| 原文 | 英語 |
|---|---|
| 主出版物標題 | Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest |
| 卷 | 2006 |
| 出版狀態 | 已發佈 - 2006 十二月 1 |
| 事件 | Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, 美国 持續時間: 2006 五月 15 → 2006 五月 17 |
其他
| 其他 | Third International SiGe Technology and Device Meeting, ISTDM 2006 |
|---|---|
| 國家 | 美国 |
| 城市 | Princeton, NJ |
| 期間 | 06/5/15 → 06/5/17 |
ASJC Scopus subject areas
- Computer Science(all)
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
引用此
Lee, M. H., Chang, S. T., Maikap, S., Yu, C. Y., & Liu, C. W. (2006). The interface properties of SiO2/strained-si with carbon incorporation surface channel MOSFETs. 於 Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest (卷 2006). [1715972]