The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

Wei Li Hong; Pei Hsuan Lo; Hao Zhe Chiu; Sheng Fu Horng; Yu Chiang Chao

doi:10.1002/admi.202002240

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(I_xBr₁₋_x)₃ and on the Performance of Perovskite Light-Emitting Diodes

Wei Li Hong, Pei Hsuan Lo, Hao Zhe Chiu, Sheng Fu Horng, Yu Chiang Chao^*

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

9 引文斯高帕斯（Scopus）

摘要

In this study, lead-free perovskite CsSn(I_xBr₁₋_x)₃ films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI₃ can be transformed to Cs₂SnI₆ upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(I_xBr₁₋_x)₃ film with increased Br⁻ ratio and the CsSnI₃ film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(I_xBr₁₋_x)₃ and Cs₂SnI₆. Defect density of state and binding energy of these materials are also investigated and reported in this study.

原文	英語
文章編號	2002240
期刊	Advanced Materials Interfaces
卷	8
發行號	12
DOIs	https://doi.org/10.1002/admi.202002240
出版狀態	已發佈 - 2021 6月 23

ASJC Scopus subject areas

材料力學
機械工業

存取文件

10.1002/admi.202002240

其它文件與鏈接

引用此

@article{adde258f3c5f4c33a60e083c75686164,

title = "The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes",

abstract = "In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.",

keywords = "electroluminescence, infrared, lead-free perovskite, light-emitting diodes",

author = "Hong, {Wei Li} and Lo, {Pei Hsuan} and Chiu, {Hao Zhe} and Horng, {Sheng Fu} and Chao, {Yu Chiang}",

note = "Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

month = jun,

day = "23",

doi = "10.1002/admi.202002240",

language = "English",

volume = "8",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "John Wiley and Sons Ltd",

number = "12",

}

TY - JOUR

T1 - The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

AU - Hong, Wei Li

AU - Lo, Pei Hsuan

AU - Chiu, Hao Zhe

AU - Horng, Sheng Fu

AU - Chao, Yu Chiang

PY - 2021/6/23

Y1 - 2021/6/23

N2 - In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.

AB - In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.

KW - electroluminescence

KW - infrared

KW - lead-free perovskite

KW - light-emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=85105782039&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85105782039&partnerID=8YFLogxK

U2 - 10.1002/admi.202002240

DO - 10.1002/admi.202002240

M3 - Article

AN - SCOPUS:85105782039

SN - 2196-7350

VL - 8

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 12

M1 - 2002240

ER -

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(I_xBr₁₋_x)₃ and on the Performance of Perovskite Light-Emitting Diodes