The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

Wei Li Hong; Pei Hsuan Lo; Hao Zhe Chiu; Sheng Fu Horng; Yu Chiang Chao

doi:10.1002/admi.202002240

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(I_xBr₁₋_x)₃ and on the Performance of Perovskite Light-Emitting Diodes

Wei Li Hong, Pei Hsuan Lo, Hao Zhe Chiu, Sheng Fu Horng, Yu Chiang Chao^*

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

In this study, lead-free perovskite CsSn(I_xBr₁₋_x)₃ films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI₃ can be transformed to Cs₂SnI₆ upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(I_xBr₁₋_x)₃ film with increased Br⁻ ratio and the CsSnI₃ film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(I_xBr₁₋_x)₃ and Cs₂SnI₆. Defect density of state and binding energy of these materials are also investigated and reported in this study.

原文	英語
期刊	Advanced Materials Interfaces
DOIs	https://doi.org/10.1002/admi.202002240
出版狀態	接受/付印 - 2021

ASJC Scopus subject areas

材料力學
機械工業

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10.1002/admi.202002240

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title = "The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes",

abstract = "In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.",

keywords = "electroluminescence, infrared, lead-free perovskite, light-emitting diodes",

author = "Hong, {Wei Li} and Lo, {Pei Hsuan} and Chiu, {Hao Zhe} and Horng, {Sheng Fu} and Chao, {Yu Chiang}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology (MOST) of Taiwan under grant numbers MOST 106‐2112‐M‐003‐016‐MY3, 108‐2923‐M‐003‐001‐MY3, and 109‐2112‐M‐003‐010‐MY3. Publisher Copyright: {\textcopyright} 2021 Wiley-VCH GmbH",

year = "2021",

doi = "10.1002/admi.202002240",

language = "English",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "John Wiley and Sons Ltd",

}

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T1 - The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

AU - Hong, Wei Li

AU - Lo, Pei Hsuan

AU - Chiu, Hao Zhe

AU - Horng, Sheng Fu

AU - Chao, Yu Chiang

N1 - Funding Information: This work was supported by the Ministry of Science and Technology (MOST) of Taiwan under grant numbers MOST 106‐2112‐M‐003‐016‐MY3, 108‐2923‐M‐003‐001‐MY3, and 109‐2112‐M‐003‐010‐MY3. Publisher Copyright: © 2021 Wiley-VCH GmbH

PY - 2021

Y1 - 2021

N2 - In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.

AB - In this study, lead-free perovskite CsSn(IxBr1−x)3 films with photoluminescence emission wavelengths from 677 to 887 nm are prepared. The influence of air exposure on their characteristics is also investigated. It is found that CsSnI3 can be transformed to Cs2SnI6 upon increasing the air exposure time. The decomposition and oxidation mechanisms are confirmed by the X-ray diffraction pattern due to the presence of CsI peak. It is observed that devices based on the CsSn(IxBr1−x)3 film with increased Br− ratio and the CsSnI3 film with prolonged air exposure time show inferior performance. These results are mainly attributed to the highest occupied molecular orbital levels of CsSn(IxBr1−x)3 and Cs2SnI6. Defect density of state and binding energy of these materials are also investigated and reported in this study.

KW - electroluminescence

KW - infrared

KW - lead-free perovskite

KW - light-emitting diodes

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U2 - 10.1002/admi.202002240

DO - 10.1002/admi.202002240

M3 - Article

AN - SCOPUS:85105782039

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

ER -

The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(IxBr1−x)3 and on the Performance of Perovskite Light-Emitting Diodes

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The Influence of Spontaneous Oxidative Conversion on the Characteristics of Lead-Free Halide Perovskite CsSn(I_xBr₁₋_x)₃ and on the Performance of Perovskite Light-Emitting Diodes