The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

P. C. Juan, Y. S. Chien, J. Y. Lin, C. P. Cheng, C. H. Liu*, H. W. Hsu, H. W. Chen, H. S. Huang

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.

原文英語
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態已發佈 - 2011
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣
持續時間: 2011 六月 212011 六月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

其他

其他4th IEEE International Nanoelectronics Conference, INEC 2011
國家/地區臺灣
城市Tao-Yuan
期間2011/06/212011/06/24

ASJC Scopus subject areas

  • 電氣與電子工程

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