@inproceedings{4eae4115e6bb47cfb70f4f1c76a7863f,
title = "The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position",
abstract = "In this paper, La-incorporated with HfO2 thin films increase crystallization temperature which of thin films is observed from X-ray diffraction (XRD). By nano-Auger analysis, the results show that the Hf atom out-diffusion into Si substrate is increased when the La dopant in the upper layer. The out-diffusion of Hf also affects the thickness of silicate. It is suggested to be the origin of leakage current. The physical and electrical properties of different positions of La were measured and compared in this work.",
keywords = "HfLaO, HfO, X-ray diffraction (XRD), nono-Auger",
author = "Juan, {P. C.} and Chien, {Y. S.} and Lin, {J. Y.} and Cheng, {C. P.} and Liu, {C. H.} and Hsu, {H. W.} and Chen, {H. W.} and Huang, {H. S.}",
year = "2011",
doi = "10.1109/INEC.2011.5991692",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}