The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

C. H. Liu; P. C. Juan; J. Y. Lin

doi:10.1016/j.tsf.2010.05.022

The influence of lanthanum doping position in ultra-thin HfO₂ films for high-k gate dielectrics

C. H. Liu
, P. C. Juan
, J. Y. Lin

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Lanthanum dopant positioning at HfO₂ ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO₂/HfLaO/p-Si and HfLaO/HfO₂/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO₂ and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO₂/Si structure has more silicate formation at the interface than the HfO₂/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.

原文	英語
頁（從 - 到）	7455-7459
頁數	5
期刊	Thin Solid Films
卷	518
發行號	24
DOIs	https://doi.org/10.1016/j.tsf.2010.05.022
出版狀態	已發佈 - 2010 10月 1

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2010.05.022

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title = "The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics",

abstract = "Lanthanum dopant positioning at HfO2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO2/HfLaO/p-Si and HfLaO/HfO2/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO2/Si structure has more silicate formation at the interface than the HfO2/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.",

keywords = "Conduction mechanism, Flatband voltage shift, High-k dielectric, X-ray diffraction, X-ray reflectivity",

author = "Liu, \{C. H.\} and Juan, \{P. C.\} and Lin, \{J. Y.\}",

note = "Funding Information: The authors would like to acknowledge the National Taiwan Normal University and Ming Chi University of Technology for providing the financial and administrative supports and environments to conduct this study.",

year = "2010",

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T1 - The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

AU - Liu, C. H.

AU - Juan, P. C.

AU - Lin, J. Y.

N1 - Funding Information: The authors would like to acknowledge the National Taiwan Normal University and Ming Chi University of Technology for providing the financial and administrative supports and environments to conduct this study.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Lanthanum dopant positioning at HfO2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO2/HfLaO/p-Si and HfLaO/HfO2/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO2/Si structure has more silicate formation at the interface than the HfO2/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.

AB - Lanthanum dopant positioning at HfO2 ultra-thin films was achieved by the co-sputtering method. The physical properties of graded doping HfO2/HfLaO/p-Si and HfLaO/HfO2/p-Si structures after 850 °C postannealing were compared. The thickness of the monolayer was analyzed by X-ray reflectivity and confirmed by the multiple beam interference model. The HfO2 and silicate phases were characterized by X-ray diffraction patterns. It is found that crystallization depends on the ratio of stacked film thicknesses, and the HfLaO/HfO2/Si structure has more silicate formation at the interface than the HfO2/HfLaO/Si structure. Metal-insulator-semiconductor capacitors were fabricated. The electrical properties including leakage current, conduction mechanism, flatband voltage shift, and barrier height were studied.

KW - Conduction mechanism

KW - Flatband voltage shift

KW - High-k dielectric

KW - X-ray diffraction

KW - X-ray reflectivity

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U2 - 10.1016/j.tsf.2010.05.022

DO - 10.1016/j.tsf.2010.05.022

M3 - Article

AN - SCOPUS:77956875405

SN - 0040-6090

VL - 518

SP - 7455

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JO - Thin Solid Films

JF - Thin Solid Films

IS - 24

ER -

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

摘要

ASJC Scopus subject areas

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The influence of lanthanum doping position in ultra-thin HfO₂ films for high-k gate dielectrics