The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil

I. Chung Chiu, Jung Jie Huang, Yung Pei Chen, I. Chun Cheng*, Jian Z. Chen, Min Hung Lee

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between the threshold voltage shift and the gate-bias stressing time indicated that the instability was mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric.

原文英語
主出版物標題Thin Film Transistors 10, TFT 10
發行者Electrochemical Society Inc.
頁面65-69
頁數5
版本5
ISBN(電子)9781607681748
ISBN(列印)9781566778244
DOIs
出版狀態已發佈 - 2010

出版系列

名字ECS Transactions
號碼5
33
ISSN(列印)1938-5862
ISSN(電子)1938-6737

ASJC Scopus subject areas

  • 工程 (全部)

指紋

深入研究「The influence of electromechanical stress on the stability of nanocrystalline silicon thin film transistors made on colorless polyimide foil」主題。共同形成了獨特的指紋。

引用此