The impacts of contact etch stop layer thickness and gate height on channel stress in strained N-metal oxide semiconductor field effect transistors

K. C. Lin, Ming-Jenq Twu*, R. H. Deng, Chuan-Hsi Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)

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Medicine & Life Sciences

Chemical Compounds

Physics & Astronomy

Engineering & Materials Science