TY - GEN
T1 - The guideline on designing a high performance nc mosfet by matching the gate capacitance and mobility enhancement
AU - Luo, Y. C.
AU - Li, F. L.
AU - Hsieh, E. R.
AU - Liu, C. H.
AU - Chung, Steve S.
AU - Chen, T. P.
AU - Huang, S. A.
AU - Chen, T. J.
AU - Chenz, Osbert
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - In this paper, to provide a guideline of designing a high-performance NCFET, we explored not only the capacitance matching between ferroelectric HZO MIM and MOSFET but also how effective mobility is affected by HZO dipoles. For capacitance matching, we observe a 50x enhancement of overall gate capacitance triggered by NC effect, while, however, it generated an adverse degradation of the mobility. This mobility degradation is induced by the remote scattering from the ferroelectric HZO dipoles. Fortunately, if suitable polarization can be formed to align the HZO dipoles, the effects of remote scattering can be mitigated. From a trade-off between gate capacitance and the mobility, an NCFET with desirable characteristics can be achieved. Besides, we showed that improved SS is possible when the derivative of the voltage across the ferroelectric MIM is negative and is corresponding to the release of energy from the ferroelectric MIM which boosts SS.
AB - In this paper, to provide a guideline of designing a high-performance NCFET, we explored not only the capacitance matching between ferroelectric HZO MIM and MOSFET but also how effective mobility is affected by HZO dipoles. For capacitance matching, we observe a 50x enhancement of overall gate capacitance triggered by NC effect, while, however, it generated an adverse degradation of the mobility. This mobility degradation is induced by the remote scattering from the ferroelectric HZO dipoles. Fortunately, if suitable polarization can be formed to align the HZO dipoles, the effects of remote scattering can be mitigated. From a trade-off between gate capacitance and the mobility, an NCFET with desirable characteristics can be achieved. Besides, we showed that improved SS is possible when the derivative of the voltage across the ferroelectric MIM is negative and is corresponding to the release of energy from the ferroelectric MIM which boosts SS.
UR - http://www.scopus.com/inward/record.url?scp=85072112770&partnerID=8YFLogxK
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U2 - 10.1109/VLSI-TSA.2019.8804688
DO - 10.1109/VLSI-TSA.2019.8804688
M3 - Conference contribution
AN - SCOPUS:85072112770
T3 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
BT - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Y2 - 22 April 2019 through 25 April 2019
ER -