The growth of high-quality SiGe films with an intermediate Si layer

S. W. Lee, P. S. Chen*, M. J. Tsai, C. T. Chia, C. W. Liu, L. J. Chen


研究成果: 雜誌貢獻會議論文同行評審

9 引文 斯高帕斯(Scopus)


The growth of high-quality relaxed SiGe epilayer has been achieved by introducing an intermediate Si layer in the SiGe film. It was found that intermediate Si in the SiGe film changed the mechanism of strain relaxation during the growth so that the shallow pits related to strain relief on the surface were suppressed. Such a SiGe/Si/SiGe heterostructure has a threading dislocation density of 8.9 × 105 cm-2 and a root mean square roughness of 3 nm. The intermediate Si layer was also demonstrated to act as effective nucleation site for dislocation loops to relax the mismatch strain. A mechanism of strain relaxation for this intermediate Si layer is proposed. Compared with the conventional compositionally graded buffer layer, it has the advantages of having thinner buffer layer for required degree of relaxation, smoother surface, and maintaining the threading dislocation density at the same level.

頁(從 - 到)302-305
期刊Thin Solid Films
出版狀態已發佈 - 2004 1月 30
事件Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, 美国
持續時間: 2002 4月 282002 5月 2

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學


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