The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

M. H. Lee, S. T. Chang, C. C. Lee, J. J. Huang, G. R. Hu, Y. S. Huang

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

摘要

The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a μc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

原文英語
頁(從 - 到)S246-S249
期刊Thin Solid Films
518
發行號6 SUPPL. 1
DOIs
出版狀態已發佈 - 2010 一月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • 引用此

    Lee, M. H., Chang, S. T., Lee, C. C., Huang, J. J., Hu, G. R., & Huang, Y. S. (2010). The gap state density of micro/nano-crystalline silicon active layer on flexible substrate. Thin Solid Films, 518(6 SUPPL. 1), S246-S249. https://doi.org/10.1016/j.tsf.2009.10.099