The gap state density of micro/nano-crystalline silicon active layer on flexible substrate

M. H. Lee*, S. T. Chang, C. C. Lee, J. J. Huang, G. R. Hu, Y. S. Huang

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    The gap state density of micro/nano-crystalline silicon active layer on flexible substrate will be redistributed with mechanical bending. The weak or broken bonds may contribute to the redistribution of trap states. During mechanical strain, the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. We conclude that the DOS of a μc-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

    原文英語
    頁(從 - 到)S246-S249
    期刊Thin Solid Films
    518
    發行號6 SUPPL. 1
    DOIs
    出版狀態已發佈 - 2010 一月 1

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 表面和介面
    • 表面、塗料和薄膜
    • 金屬和合金
    • 材料化學

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