The fabrication of single electron transistor by polysilicon thin film and point-contact lithography

Kuo Dong Huang*, Jyi Tsong Lin, Shu Fen Hu, Chin Lung Sung

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

1 引文 斯高帕斯(Scopus)

摘要

In this paper, point-contact lithography depended on the proximity effect is employed to fabricate the single electron transistor (SET) by using polysilicon thin film which is deposited upon an insulation layer (POI or TFT). The electrical characteristics of the SET fabricated, such as Coulomb black and Coulomb oscillation, are observed and discussed appropriately. It can be operated beyond 180 °K and the SET characteristics can be still observed. In addition, the channel width of the SET below 20 nm has been also fabricated.

原文英語
主出版物標題2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings
發行者IEEE Computer Society
頁面149-152
頁數4
ISBN(列印)1424401178, 9781424401178
DOIs
出版狀態已發佈 - 2006
事件2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, 塞尔维亚
持續時間: 2006 五月 142006 五月 17

出版系列

名字2006 25th International Conference on Microelectronics, MIEL 2006 - Proceedings

其他

其他2006 25th International Conference on Microelectronics, MIEL 2006
國家/地區塞尔维亚
城市Belgrade
期間2006/05/142006/05/17

ASJC Scopus subject areas

  • 電氣與電子工程

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