The fabrication of poly-Si MOSFETs using ultra-thin high-K/metal-gate stack for monolithic 3D integrated circuits technology applications

INIS

• applications 100%
• transistors 100%
• stacks 100%
• fabrication 100%
• metals 100%
• integrated circuits 100%
• mosfet 100%
• performance 66%
• oxides 66%
• hafnium 66%
• values 33%
• stability 33%
• processing 33%
• layers 33%
• cost 33%
• solutions 33%
• panels 33%
• mobility 33%
• glass 33%
• scaling 33%
• low temperature 33%
• leakage 33%
• alignment 33%
• bonding 33%
• physics 33%
• hafnium silicates 33%
• tin 33%
• dielectric materials 33%

Material Science

• Transistor 100%
• Metal 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Electronic Circuit 100%
• Oxide 66%
• Hafnium 66%
• Temperature 33%
• Dielectric Material 33%
• Glass 33%
• Thermal Stability 33%

Engineering

• K Value 33%
• Moore's Law 33%