The experimental demonstration of the BTI-induced breakdown path in 28nm high-k metal gate technology CMOS devices

E. R. Hsieh*, P. Y. Lu, Steve S. Chung, K. Y. Chang, C. H. Liu, J. C. Ke, C. W. Yang, C. T. Tsai

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

19 引文 斯高帕斯(Scopus)

摘要

For the first time, the breakdown path induced by BTI stress can be traced from the RTN measurement. It was demonstrated on advanced high-k metal gate CMOS devices. RTN traps in the dielectric layers can be labeled as a pointer to trace the breakdown path. It was found that breakdown path tends to grow from the interface of HK/IL or IL/Si which is the most defective region. Two types of breakdown paths are revealed. The soft-breakdown path is in a shape like spindle, while the hard breakdown is like a snake-walking path. These two breakdown paths are reflected in a two slopes TDDB lifetime plot. These new findings on the breakdown-path formation will be helpful to the understanding of the reliability in HK CMOS devices.

原文英語
主出版物標題Digest of Technical Papers - Symposium on VLSI Technology
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479933310
DOIs
出版狀態已發佈 - 2014 九月 8
事件34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, 美国
持續時間: 2014 六月 92014 六月 12

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
ISSN(列印)0743-1562

會議

會議34th Symposium on VLSI Technology, VLSIT 2014
國家/地區美国
城市Honolulu
期間2014/06/092014/06/12

ASJC Scopus subject areas

  • 電氣與電子工程

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