The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

P. C. Juan, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

指紋 深入研究「The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy<sub>2</sub>O<sub>3</sub>/Si MIS nanolaminated structures」主題。共同形成了獨特的指紋。

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy