The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

P. C. Juan; C. H. Liu; C. L. Lin; F. C. Mong; J. H. Huang

doi:10.1016/j.mee.2013.03.083

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy₂O₃/Si MIS nanolaminated structures

P. C. Juan^*, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Nano-film Dy₂O₃:Zr and Dy₂O₃ gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

原文	英語
頁（從 - 到）	172-176
頁數	5
期刊	Microelectronic Engineering
卷	109
DOIs	https://doi.org/10.1016/j.mee.2013.03.083
出版狀態	已發佈 - 2013

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mee.2013.03.083

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title = "The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures",

abstract = "Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.",

keywords = "Flatband voltage shift (ΔV), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ZrN capping layer",

author = "Juan, {P. C.} and Liu, {C. H.} and Lin, {C. L.} and Mong, {F. C.} and Huang, {J. H.}",

note = "Funding Information: The authors would like to thank the National Science Council, Taiwan, Republic of China for supporting this work under Contract No. NSC 99-2221-E-131-022-MY2. ",

year = "2013",

doi = "10.1016/j.mee.2013.03.083",

language = "English",

volume = "109",

pages = "172--176",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

AU - Juan, P. C.

AU - Liu, C. H.

AU - Lin, C. L.

AU - Mong, F. C.

AU - Huang, J. H.

N1 - Funding Information: The authors would like to thank the National Science Council, Taiwan, Republic of China for supporting this work under Contract No. NSC 99-2221-E-131-022-MY2.

PY - 2013

Y1 - 2013

N2 - Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

AB - Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

KW - Flatband voltage shift (ΔV)

KW - X-ray diffraction (XRD)

KW - X-ray photoelectron spectroscopy (XPS)

KW - ZrN capping layer

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U2 - 10.1016/j.mee.2013.03.083

DO - 10.1016/j.mee.2013.03.083

M3 - Article

AN - SCOPUS:84876712134

SN - 0167-9317

VL - 109

SP - 172

EP - 176

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

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ASJC Scopus subject areas

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The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy₂O₃/Si MIS nanolaminated structures