The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

P. C. Juan, C. H. Liu, C. L. Lin, F. C. Mong, J. H. Huang

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Nano-film Dy2O3:Zr and Dy2O3 gate oxide stacks with and without ZrN capping layer were fabricated. The electrical and physical properties were compared in the PMA temperature range of 550-850 C. The flatband voltage shift decreases with increasing the annealing temperature, which indicates the reduction in oxide trap charges especially for the MIS structures with ZrN capping. The dielectric constant is enhanced due to lesser outdiffusion of Ti, O, and Dy atoms from ZrN layer. The atomic percentage was studied by the depth profile of X-ray photoelectron spectra.

原文英語
頁(從 - 到)172-176
頁數5
期刊Microelectronic Engineering
109
DOIs
出版狀態已發佈 - 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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