@inproceedings{94025c17e0ea43b58e006044de4125e5,
title = "The effect of ternary material (Zr, Y, and O) high-k gate dielectrics",
abstract = "In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y32O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.",
keywords = "Leakage current, Stack structure, Thin films, YO",
author = "Lin, {K. C.} and Chou, {C. H.} and Chen, {J. Y.} and Li, {C. J.} and Huang, {J. Y.} and Liu, {C. H.}",
year = "2013",
doi = "10.4028/www.scientific.net/AMR.699.422",
language = "English",
isbn = "9783037856758",
series = "Advanced Materials Research",
pages = "422--425",
booktitle = "Materials Science and Chemical Engineering",
note = "2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 ; Conference date: 20-02-2013 Through 21-02-2013",
}