The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng; C. K. Lo; San Yuan Chen; Y. D. Yao

doi:10.1016/j.jmmm.2006.01.173

The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Tai Yen Peng^*
, C. K. Lo
, San Yuan Chen
, Y. D. Yao

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The thermal stability of a multilayer structure of protection layer/Co₉₀Fe₁₀/Os (d nm)/Os₂₀Mn₈₀ has been studied as functions of annealing temperature (T_an) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co₉₀Fe₁₀/Os₂₀Mn₈₀ interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

原文	英語
頁（從 - 到）	e50-e52
期刊	Journal of Magnetism and Magnetic Materials
卷	304
發行號	1
DOIs	https://doi.org/10.1016/j.jmmm.2006.01.173
出版狀態	已發佈 - 2006 9月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學

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10.1016/j.jmmm.2006.01.173

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@article{d39f7b17a2f246eea91929bff00ecc89,

title = "The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films",

abstract = "The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.",

keywords = "CoFe/Os/IrMn, CoFe/Os/OsMn, Mn diffusion, Os interlayer, Thermal stability",

author = "Peng, \{Tai Yen\} and Lo, \{C. K.\} and Chen, \{San Yuan\} and Yao, \{Y. D.\}",

note = "Funding Information: This work was financial supported by ROC MOEA and NSC under the grant Nos. of A331XS3710 and NSC-94-2120-M-001-008, respectively. ",

year = "2006",

month = sep,

doi = "10.1016/j.jmmm.2006.01.173",

language = "English",

volume = "304",

pages = "e50--e52",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier BV",

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TY - JOUR

T1 - The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

AU - Peng, Tai Yen

AU - Lo, C. K.

AU - Chen, San Yuan

AU - Yao, Y. D.

N1 - Funding Information: This work was financial supported by ROC MOEA and NSC under the grant Nos. of A331XS3710 and NSC-94-2120-M-001-008, respectively.

PY - 2006/9

Y1 - 2006/9

N2 - The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

AB - The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.

KW - CoFe/Os/IrMn

KW - CoFe/Os/OsMn

KW - Mn diffusion

KW - Os interlayer

KW - Thermal stability

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U2 - 10.1016/j.jmmm.2006.01.173

DO - 10.1016/j.jmmm.2006.01.173

M3 - Article

AN - SCOPUS:33646865726

SN - 0304-8853

VL - 304

SP - e50-e52

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1

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The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

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