The thermal stability of a multilayer structure of protection layer/Co90Fe10/Os (d nm)/Os20Mn80 has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co90Fe10/Os20Mn80 interface shows better thermal stability. No diffusion evidence was found for samples with d ≧ 0.3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 °C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics