The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

Chuan Hsi Liu; Pi Chun Juan; Yi Hsien Chou; Hung Wen Hsu

doi:10.1016/j.mee.2011.08.003

The effect of lanthanum (La) incorporation in ultra-thin ZrO₂ high-κ gate dielectrics

Chuan Hsi Liu^*, Pi Chun Juan, Yi Hsien Chou, Hung Wen Hsu

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO ₂ (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO₂ can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

原文	英語
頁（從 - 到）	2-5
頁數	4
期刊	Microelectronic Engineering
卷	89
發行號	1
DOIs	https://doi.org/10.1016/j.mee.2011.08.003
出版狀態	已發佈 - 2012 1月

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/j.mee.2011.08.003

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@article{3760e1f737c4485f802a201c5ee5000a,

title = "The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics",

abstract = "Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.",

keywords = "Flatband voltage shift, High-κ dielectrics, Interfacial layer, Thermal stability, XPS depth profile, ZrLaO",

author = "Liu, {Chuan Hsi} and Juan, {Pi Chun} and Chou, {Yi Hsien} and Hsu, {Hung Wen}",

note = "Funding Information: The authors would like to acknowledge the Ming Chi University of Technology and National Taiwan Normal University for providing the financial and administrative supports and environments to conduct this work.",

year = "2012",

month = jan,

doi = "10.1016/j.mee.2011.08.003",

language = "English",

volume = "89",

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T1 - The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

AU - Liu, Chuan Hsi

AU - Juan, Pi Chun

AU - Chou, Yi Hsien

AU - Hsu, Hung Wen

N1 - Funding Information: The authors would like to acknowledge the Ming Chi University of Technology and National Taiwan Normal University for providing the financial and administrative supports and environments to conduct this work.

PY - 2012/1

Y1 - 2012/1

N2 - Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

AB - Metal-oxide-semiconductor (MOS) capacitors with La-incorporated ZrO 2 (ZrLaO) high-κ gate dielectrics through co-sputtering technique have been fabricated. The effect of La incorporation on the thermal stability and electrical characteristics has been investigated. XRD spectra and HRTEM images indicate that the addition of La into ZrO2 can significantly increase the crystallization temperature of the films and inhibit the formation of interfacial layers. The technique of combined method of ellipsometer and XRR confirms that the interfacial layer is dramatically reduced with La incorporation, and the interfacial layer is identified as silicate formation through XPS depth profile. In addition, current-voltage and capacitance-voltage characteristics reveal that the relative dielectric constant and flatband voltage shift of MOS with ZrLaO dielectrics are improved with a slight reduction in barrier height.

KW - Flatband voltage shift

KW - High-κ dielectrics

KW - Interfacial layer

KW - Thermal stability

KW - XPS depth profile

KW - ZrLaO

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JO - Microelectronic Engineering

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The effect of lanthanum (La) incorporation in ultra-thin ZrO2 high-κ gate dielectrics

摘要

ASJC Scopus subject areas

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The effect of lanthanum (La) incorporation in ultra-thin ZrO₂ high-κ gate dielectrics