The effect of a smart body tie on the bottom-gate thin film transistor

Jyi Tsong Lin, Kuo Dong Huang*, Shu Fen Hu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect.

原文英語
頁(從 - 到)808-812
頁數5
期刊Solid-State Electronics
52
發行號5
DOIs
出版狀態已發佈 - 2008 五月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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