TY - GEN
T1 - The design of rapid thermal process for large diameter applications [semiconductor wafer processing]
AU - Liu, C. W.
AU - Lee, M. H.
AU - Chao, C. Y.
AU - Chen, C. Y.
AU - Yang, C. C.
AU - Chang, Y.
N1 - Funding Information:
We have studied the temperature uniformity and measurement of the wafer in RTP. The optimum design of temperature uniformity and power consumption can be obtained. The complete model of wafer emissivity is also obtained. In temperature measurement, using the thermal expansion of grating to measure the wafer is better and more accurate than convention method, and this work is supported by National Science Council (87-2221- E- 002-005,86-2215-E-002-010).
Publisher Copyright:
© 1998 IEEE.
PY - 1998
Y1 - 1998
N2 - In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.
AB - In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.
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U2 - 10.1109/SMTW.1998.722653
DO - 10.1109/SMTW.1998.722653
M3 - Conference contribution
AN - SCOPUS:85053471142
SN - 0780351797
SN - 9780780351790
T3 - 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
SP - 61
EP - 70
BT - 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
Y2 - 16 June 1998
ER -