The design of rapid thermal process for large diameter applications [semiconductor wafer processing]

C. W. Liu*, M. H. Lee, C. Y. Chao, C. Y. Chen, C. C. Yang, Y. Chang

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this paper, we address issues of the power consumption of the lamps, temperature uniformity across wafer, and the grating temperature measurements, for a large diameter wafer process. The optimum design of the lamp separation and the distance between the lamp arrays and wafer surface can be obtained with uniform radiation and the minimum lamp power. Based on a simplified radiation thermal model, the transient and steady state non-uniformity of temperature on the wafer edge can be predicted. The wafer emissivity as a function of temperature and wavelength is exactly modeled. The effect of a multi-layer grown on Si was also included. A grating temperature measurement was demonstrated in the RTP process. We used the laser ablation technique to fabricate a Si grating. To increase the sensitivity of measurements, a large angle diffracted beam was used.

原文英語
主出版物標題1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
發行者Institute of Electrical and Electronics Engineers Inc.
頁面61-70
頁數10
ISBN(列印)0780351797, 9780780351790
DOIs
出版狀態已發佈 - 1998
對外發佈
事件1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998 - Hsinchu, 臺灣
持續時間: 1998 六月 16 → …

出版系列

名字1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998

會議

會議1998 Semiconductor Manufacturing Technology Workshop, SMTW 1998
國家/地區臺灣
城市Hsinchu
期間1998/06/16 → …

ASJC Scopus subject areas

  • 電子、光磁材料
  • 工業與製造工程
  • 電氣與電子工程
  • 硬體和架構

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