摘要
We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 439-442 |
| 頁數 | 4 |
| 期刊 | Proceedings of International Meeting on Information Display |
| 卷 | 2006 |
| 出版狀態 | 已發佈 - 2006 |
| 對外發佈 | 是 |
| 事件 | IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, 大韓民國 持續時間: 2006 8月 22 → 2006 8月 25 |
ASJC Scopus subject areas
- 一般工程
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