The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate

M. H. Lee*, K. Y. Ho, P. C. Chen, C. C. Cheng, Y. H. Yeh

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

摘要

We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.

原文英語
頁(從 - 到)439-442
頁數4
期刊Proceedings of International Meeting on Information Display
2006
出版狀態已發佈 - 2006
對外發佈
事件IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference - Daegu, 大韓民國
持續時間: 2006 八月 222006 八月 25

ASJC Scopus subject areas

  • 工程 (全部)

指紋

深入研究「The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate」主題。共同形成了獨特的指紋。

引用此