TY - JOUR
T1 - The dependence of mechanical strain on a-Si:H TFTs and metal connection fabricated on flexible substrate
AU - Lee, M. H.
AU - Ho, K. Y.
AU - Chen, P. C.
AU - Cheng, C. C.
AU - Yeh, Y. H.
PY - 2006
Y1 - 2006
N2 - We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.
AB - We evaluated a-Si:H TFTs fabricated on polyimide substrate (PI) at the highest temperature of 160 °C with uniaxial and tensile strain to imitate flexible display. With tensile strain, the threshold voltage of a-Si:H TFTs have positive shift due to extra dangling bond formation in a-Si:H layer. However, no significant degradation of the subthreshold swing and effective mobility with tensile strain of a-Si:H TFTs indicates the similar level of band tail state. The metal wire with the width of 10 μ for connection on flexible substrate can sustain with curvature radius 2.5 cm.
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M3 - Conference article
AN - SCOPUS:33846184134
SN - 1738-7558
VL - 2006
SP - 439
EP - 442
JO - Proceedings of International Meeting on Information Display
JF - Proceedings of International Meeting on Information Display
T2 - IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference
Y2 - 22 August 2006 through 25 August 2006
ER -