The Demonstration of High-Quality Carbon Nanotubes as Through-Silicon Vias (TSVs) for Three-Dimensional Connection Stacking and Power-Via Technology

C. M. Yen, S. Y. Chang, K. C. Chen, Y. J. Feng, L. H. Chen, B. Z. Liao, M. H. Lee, S. C. Chen, M. H. Liao*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

With the usage of gas ferrocene Fe(C5H5)2 as a reactant, which is different from the traditional thin Fe film, to grow the high-quality carbon nanotubes (CNTs) in the high aspect ratio (AR) trench structure, it has many advantages to be the through-silicon vias (TSVs) material for the three-dimensional (3-D) stacking technology. In this work, we successfully demonstrate the full process flow, including CNT growing, chemical-mechanical planarization (CMP), and wafer temporary bonding for CNTs as TSVs in the 3-D stacking connection. The flexibility for this demonstrated process flow makes the integration of real high dense devices and CNTs as TSVs for the 3-D connection more easily.

原文英語
頁(從 - 到)1600-1603
頁數4
期刊IEEE Transactions on Electron Devices
69
發行號3
DOIs
出版狀態已發佈 - 2022 3月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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