The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

Chin Lien; Cho Fan Hsieh; Hung Sen Wu; Teng Chun Wu; Syu Jhih Wei; Yu Heng Chu; Ming Han Liao; Min Hung Lee

doi:10.1109/TED.2018.2868849

The demonstration of high-performance multilayer BaTiO₃/BiFeO₃ stack MIM capacitors

Chin Lien^*
, Cho Fan Hsieh
, Hung Sen Wu
, Teng Chun Wu
, Syu Jhih Wei
, Yu Heng Chu
, Ming Han Liao
, Min Hung Lee

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Multilayer BaTiO₃/BiFeO₃ (BTO/BFO) stack structures were prepared on the Pt/TiO₂/SiO₂/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

原文	英語
文章編號	8466023
頁（從 - 到）	4834-4838
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	65
發行號	11
DOIs	https://doi.org/10.1109/TED.2018.2868849
出版狀態	已發佈 - 2018 11月

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2018.2868849

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引用此

@article{c40a3dbfaa90400ea51d52a5de88ccb0,

title = "The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors",

abstract = "Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1\% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6\% improvement, respectively, with the additional cap of the BTO layer.",

keywords = "Barium titanate (BaTiO BTO), bismuth ferrite (BiFeO BFO), metal-insulator-metal (MIM) capacitor, multilayer stack, rapid thermal anneal (RTA)",

author = "Chin Lien and Hsieh, \{Cho Fan\} and Wu, \{Hung Sen\} and Wu, \{Teng Chun\} and Wei, \{Syu Jhih\} and Chu, \{Yu Heng\} and Liao, \{Ming Han\} and Lee, \{Min Hung\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2018",

month = nov,

doi = "10.1109/TED.2018.2868849",

language = "English",

volume = "65",

pages = "4834--4838",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

AU - Lien, Chin

AU - Hsieh, Cho Fan

AU - Wu, Hung Sen

AU - Wu, Teng Chun

AU - Wei, Syu Jhih

AU - Chu, Yu Heng

AU - Liao, Ming Han

AU - Lee, Min Hung

PY - 2018/11

Y1 - 2018/11

N2 - Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

AB - Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

KW - Barium titanate (BaTiO BTO)

KW - bismuth ferrite (BiFeO BFO)

KW - metal-insulator-metal (MIM) capacitor

KW - multilayer stack

KW - rapid thermal anneal (RTA)

UR - https://www.scopus.com/pages/publications/85053356335

UR - https://www.scopus.com/pages/publications/85053356335#tab=citedBy

U2 - 10.1109/TED.2018.2868849

DO - 10.1109/TED.2018.2868849

M3 - Article

AN - SCOPUS:85053356335

SN - 0018-9383

VL - 65

SP - 4834

EP - 4838

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

M1 - 8466023

ER -

The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

摘要

ASJC Scopus subject areas

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The demonstration of high-performance multilayer BaTiO₃/BiFeO₃ stack MIM capacitors