The demonstration of high-performance multilayer BaTiO3/BiFeO3 stack MIM capacitors

Chin Lien*, Cho Fan Hsieh, Hung Sen Wu, Teng Chun Wu, Syu Jhih Wei, Yu Heng Chu, Ming Han Liao, Min Hung Lee

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

9 引文 斯高帕斯(Scopus)

摘要

Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.

原文英語
文章編號8466023
頁(從 - 到)4834-4838
頁數5
期刊IEEE Transactions on Electron Devices
65
發行號11
DOIs
出版狀態已發佈 - 2018 11月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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