摘要
Multilayer BaTiO3/BiFeO3 (BTO/BFO) stack structures were prepared on the Pt/TiO2/SiO2/Si (100) substrate via highly accurate magnetron sputtering process. The cubic to the tetragonal phase transition of BTO was confirmed by both the X-ray diffraction and Raman spectroscopy after the process of rapid thermal anneal. An 74.1% increase of the relative permittivity was observed with the increasing thickness of BFO in the metal-insulator-metal capacitor. On the other hand, we also demonstrate that the leakage current density and the relative permittivity are found to have 20-50 times reduction and 26.6% improvement, respectively, with the additional cap of the BTO layer.
原文 | 英語 |
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文章編號 | 8466023 |
頁(從 - 到) | 4834-4838 |
頁數 | 5 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 65 |
發行號 | 11 |
DOIs | |
出版狀態 | 已發佈 - 2018 11月 |
ASJC Scopus subject areas
- 電子、光磁材料
- 電氣與電子工程