The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs

P. Y. Lu, C. M. Yen, S. Y. Chang, Y. J. Feng, C. Lien, C. W. Hu, C. W. Yao, M. H. Lee, M. H. Liao*

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~10-6 Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm-1K-1), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters (<5 μm) Through Silicon Vias (TSVs) is demonstrated. The device temperature can be reduced ~15 °C and the keep-out zone region can be reduced ~80%. on the other hand, the CNTs 3DICs system also shows that the better system-level electrical performance from the latency, bandwidth density, power density, and reliability (~10X) points of view. The developed technologies including (1) High quality CNTs growing at the low temperature (550 °C) using a novel gas Fe(C5H5)2 reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device.

原文英語
主出版物標題2020 IEEE International Electron Devices Meeting, IEDM 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面12.6.1-12.6.4
ISBN(電子)9781728188881
DOIs
出版狀態已發佈 - 2020 十二月 12
事件66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, 美国
持續時間: 2020 十二月 122020 十二月 18

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2020-December
ISSN(列印)0163-1918

會議

會議66th Annual IEEE International Electron Devices Meeting, IEDM 2020
國家/地區美国
城市Virtual, San Francisco
期間2020/12/122020/12/18

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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