@article{78afb7091879413ea9e595435bc1584f,
title = "The Demonstration of 3-D Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 Thermoelectric Devices by Ionized Sputter System",
abstract = "In this brief, we propose and demonstrate the Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermoelectric (TE) device with the 3-D structure through the manufacturing process by the ionized sputter system. With the same top-point-of-view area, the proposed 3-D TE device in this brief has approximately twice the number of n-/p-junctions than that in our previously demonstrated 2-D TE device. In order to extract the Seebeck coefficient (S) and the electrical conductivity (σ) to evaluate the total efficiency in our TE device, we also build up the accurate measurement systems. It can be found that the S value is improved ∼25% successfully in our proposed 3-D TE device with the same TE material thickness (t) of 100 nm. On the other hand, the power factor is also found to be enhanced to ∼50% accordingly. In summary, the figure of merit (ZT) - i.e., the ability of a TE device to efficiently produce electricity - is increased to ∼50% and achieves a value of 0.9, which is the highly competitive number at the low operating temperature (T) of 130 °C in our proposed 3-D TE devices in this brief.",
keywords = "3-D, BiTeSe/BiTeSb, Thermoelectric (TE)",
author = "Liao, {M. H.} and Huang, {K. C.} and Su, {W. J.} and Chen, {S. C.} and Lee, {M. H.}",
note = "Funding Information: This work was supported in part by the Ministry of Science and Technology (MOST), Taiwan, under Grant 106-2918-I-002-039-, Grant 106-2221-E-002-199-MY3, and Grant 105-2628-E-002-010-MY3, in part by the Ministry of Education and National Taiwan University, Taiwan, under Grant 107L891705 and Grant 108L891705, in part by the Taiwan Semiconductor Research Institute (TSRI), and in part by Ray Lead Tech Company Ltd., Taiwan. The review of this brief was arranged by Editor R. Venkatasubramanian. Funding Information: Manuscript received September 21, 2019; accepted October 21, 2019. Date of publication November 19, 2019; date of current version December 30, 2019. This work was supported in part by the Ministry of Science and Technology (MOST), Taiwan, under Grant 106-2918-I-002-039-, Grant 106-2221-E-002-199-MY3, and Grant 105-2628-E-002-010-MY3, in part by the Ministry of Education and National Taiwan University, Taiwan, under Grant 107L891705 and Grant 108L891705, in part by the Taiwan Semiconductor Research Institute (TSRI), and in part by Ray Lead Tech Company Ltd., Taiwan. The review of this brief was arranged by Editor R. Venkatasubramanian. (Corresponding author: M.-H. Liao.) M.-H. Liao, K.-C. Huang, and W.-J. Su are with the Department of Mechanical Engineering, National Taiwan University, Taipei 11617, Taiwan (e-mail: mhliaoa@ntu.edu.tw). Publisher Copyright: {\textcopyright} 2019 IEEE.",
year = "2020",
month = jan,
doi = "10.1109/TED.2019.2950981",
language = "English",
volume = "67",
pages = "406--408",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}