@inproceedings{e8bdf58a324f4bad848ca43ea4514497,
title = "The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics",
abstract = "The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.",
keywords = "A-Si:H, Flexible, Mechanical strain, Trap state",
author = "Lee, {M. H.} and Chang, {S. T.} and Weng, {S. C.} and Liu, {W. H.} and Chen, {K. J.} and Ho, {K. Y.} and Liao, {M. H.} and Huang, {J. J.} and Hu, {G. R.}",
year = "2009",
doi = "10.1109/IRPS.2009.5173388",
language = "English",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "956--959",
booktitle = "2009 IEEE International Reliability Physics Symposium, IRPS 2009",
note = "2009 IEEE International Reliability Physics Symposium, IRPS 2009 ; Conference date: 26-04-2009 Through 30-04-2009",
}