The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics

Min-Hung Lee, S. T. Chang, S. C. Weng, W. H. Liu, K. J. Chen, K. Y. Ho, M. H. Liao, J. J. Huang, G. R. Hu

研究成果: 書貢獻/報告類型會議貢獻

摘要

The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. The weak or broken bonds may contribute to the redistribution of trap states, and lead to unstable electrical characteristics of the a-Si:H TFTs on plastic substrates. We conclude that the DOS of an a-Si:H layer under mechanical strain is the fundamental reliability issue for the development of flexible electronics.

原文英語
主出版物標題2009 IEEE International Reliability Physics Symposium, IRPS 2009
頁面956-959
頁數4
DOIs
出版狀態已發佈 - 2009 十一月 12
事件2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, 加拿大
持續時間: 2009 四月 262009 四月 30

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

其他

其他2009 IEEE International Reliability Physics Symposium, IRPS 2009
國家加拿大
城市Montreal, QC
期間09/4/2609/4/30

ASJC Scopus subject areas

  • Engineering(all)

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  • 引用此

    Lee, M-H., Chang, S. T., Weng, S. C., Liu, W. H., Chen, K. J., Ho, K. Y., Liao, M. H., Huang, J. J., & Hu, G. R. (2009). The correlation between trap states and mechanical reliability of amorphous Si:H TFTS for flexible electronics. 於 2009 IEEE International Reliability Physics Symposium, IRPS 2009 (頁 956-959). [5173388] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2009.5173388