The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures

Tsu Yi Fu*, Chang Yu Kuo, Sung Lin Tsay

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

The behavior of Co atoms on Si (111)-7 × 7 surfaces at low temperatures was studied by using a variable-temperature scanning tunneling microscopy (VT-STM). Co atoms deposited on Si (111)-7 × 7 surfaces are randomly adsorbed at 100 K. Co atoms start to react with adatoms of Si (111)-7 × 7 surfaces at temperatures between 126 K and 130 K. The reaction transfers the bright dots of Co atoms to dark dots under the STM observation of negative bias. Analysis of the reaction occurrence sites and comparing with the results of room temperature deposition shows that the Co atoms tend to diffuse and react with the adatoms of Si (111)-7 × 7 surfaces at the center sites of unfaulted half unit cell (UHUC) at higher temperatures.

原文英語
頁(從 - 到)8290-8292
頁數3
期刊Thin Solid Films
515
發行號22
DOIs
出版狀態已發佈 - 2007 八月 15

ASJC Scopus subject areas

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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