The analysis of the process-induced channel stress in N-MOSFET

M. J. Twu, R. H. Deng, Z. H. Chen, M. C. Tsai, K. C. Lin, C. H. Liu

研究成果: 書貢獻/報告類型會議論文篇章

摘要

This research analyzes internal stress in the N-MOSFET. The research has two parts. First, we explore the effect of N-MOSFET channel stress when CESL layer is not utilized. The dimensional effect of spacer upon channel stress in N-MOSFET with variant width of ONO (oxide, nitride, oxide) is compared. Second, with stress applied to CESL and the spacer stressor, long/short channel effects are analyzed. It is demonstrated that when the thickness of CESL and the height of gate increase, the channel stress under the gate dielectric layer becomes tensile, and the performance is improved in the short channel, resulting in the improved performance in the whole N-MOSFET. Therefore, better device characteristics can be expected through the approach disclosed in this paper.

原文英語
主出版物標題Materials Science and Chemical Engineering
頁面440-444
頁數5
DOIs
出版狀態已發佈 - 2013
事件2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , 新加坡
持續時間: 2013 2月 202013 2月 21

出版系列

名字Advanced Materials Research
699
ISSN(列印)1022-6680

其他

其他2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
國家/地區新加坡
期間2013/02/202013/02/21

ASJC Scopus subject areas

  • 工程 (全部)

指紋

深入研究「The analysis of the process-induced channel stress in N-MOSFET」主題。共同形成了獨特的指紋。

引用此