TY - GEN
T1 - The analysis of the process-induced channel stress in N-MOSFET
AU - Twu, M. J.
AU - Deng, R. H.
AU - Chen, Z. H.
AU - Tsai, M. C.
AU - Lin, K. C.
AU - Liu, C. H.
PY - 2013
Y1 - 2013
N2 - This research analyzes internal stress in the N-MOSFET. The research has two parts. First, we explore the effect of N-MOSFET channel stress when CESL layer is not utilized. The dimensional effect of spacer upon channel stress in N-MOSFET with variant width of ONO (oxide, nitride, oxide) is compared. Second, with stress applied to CESL and the spacer stressor, long/short channel effects are analyzed. It is demonstrated that when the thickness of CESL and the height of gate increase, the channel stress under the gate dielectric layer becomes tensile, and the performance is improved in the short channel, resulting in the improved performance in the whole N-MOSFET. Therefore, better device characteristics can be expected through the approach disclosed in this paper.
AB - This research analyzes internal stress in the N-MOSFET. The research has two parts. First, we explore the effect of N-MOSFET channel stress when CESL layer is not utilized. The dimensional effect of spacer upon channel stress in N-MOSFET with variant width of ONO (oxide, nitride, oxide) is compared. Second, with stress applied to CESL and the spacer stressor, long/short channel effects are analyzed. It is demonstrated that when the thickness of CESL and the height of gate increase, the channel stress under the gate dielectric layer becomes tensile, and the performance is improved in the short channel, resulting in the improved performance in the whole N-MOSFET. Therefore, better device characteristics can be expected through the approach disclosed in this paper.
KW - CESL (contact etch stop layer)
KW - Channel stress
KW - N-MOSFET
KW - Spacer stressor
UR - http://www.scopus.com/inward/record.url?scp=84879660363&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879660363&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.699.440
DO - 10.4028/www.scientific.net/AMR.699.440
M3 - Conference contribution
AN - SCOPUS:84879660363
SN - 9783037856758
T3 - Advanced Materials Research
SP - 440
EP - 444
BT - Materials Science and Chemical Engineering
T2 - 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013
Y2 - 20 February 2013 through 21 February 2013
ER -