The analysis of channel stress induced by CESL in N-MOSFET

Ming-Jenq Twu, Wen-Chung Kao, K. C. Lin, K. D. Chen, Y. T. Kua, Chuan-Hsi Liu

研究成果: 書貢獻/報告類型會議貢獻

摘要

The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.

原文英語
主出版物標題Quantum, Nano, Micro Technologies and Applied Researches
頁面235-240
頁數6
DOIs
出版狀態已發佈 - 2014 一月 16
事件2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , 新加坡
持續時間: 2013 十二月 12013 十二月 2

出版系列

名字Applied Mechanics and Materials
481
ISSN(列印)1660-9336
ISSN(電子)1662-7482

其他

其他2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
國家新加坡
期間13/12/113/12/2

ASJC Scopus subject areas

  • Engineering(all)

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  • 引用此

    Twu, M-J., Kao, W-C., Lin, K. C., Chen, K. D., Kua, Y. T., & Liu, C-H. (2014). The analysis of channel stress induced by CESL in N-MOSFET. 於 Quantum, Nano, Micro Technologies and Applied Researches (頁 235-240). (Applied Mechanics and Materials; 卷 481). https://doi.org/10.4028/www.scientific.net/AMM.481.235