TY - GEN
T1 - The analysis of channel stress induced by CESL in N-MOSFET
AU - Twu, Ming-Jenq
AU - Kao, Wen-Chung
AU - Lin, K. C.
AU - Chen, K. D.
AU - Kua, Y. T.
AU - Liu, Chuan-Hsi
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.
AB - The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.
KW - CESL stressor
KW - Channel stress
KW - Mobility
UR - http://www.scopus.com/inward/record.url?scp=84891935495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891935495&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.481.235
DO - 10.4028/www.scientific.net/AMM.481.235
M3 - Conference contribution
AN - SCOPUS:84891935495
SN - 9783037859681
T3 - Applied Mechanics and Materials
SP - 235
EP - 240
BT - Quantum, Nano, Micro Technologies and Applied Researches
T2 - 2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
Y2 - 1 December 2013 through 2 December 2013
ER -