The analysis of channel stress induced by CESL in N-MOSFET

Ming-Jenq Twu; Wen-Chung Kao; K. C. Lin; K. D. Chen; Y. T. Kua; Chuan-Hsi Liu

doi:10.4028/www.scientific.net/AMM.481.235

The analysis of channel stress induced by CESL in N-MOSFET

Ming-Jenq Twu, Wen-Chung Kao, K. C. Lin, K. D. Chen, Y. T. Kua, Chuan-Hsi Liu

研究成果: 書貢獻/報告類型 › 會議貢獻

摘要

The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.

原文	英語
主出版物標題	Quantum, Nano, Micro Technologies and Applied Researches
頁面	235-240
頁數	6
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.481.235
出版狀態	已發佈 - 2014 一月 16
事件	2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , 新加坡持續時間: 2013 十二月 1 → 2013 十二月 2

出版系列

名字	Applied Mechanics and Materials
卷	481
ISSN（列印）	1660-9336
ISSN（電子）	1662-7482

其他

其他	2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
國家	新加坡
期間	13/12/1 → 13/12/2

ASJC Scopus subject areas

Engineering(all)

存取文件

10.4028/www.scientific.net/AMM.481.235

指紋深入研究「The analysis of channel stress induced by CESL in N-MOSFET」主題。共同形成了獨特的指紋。

引用此

Twu, M-J., Kao, W-C., Lin, K. C., Chen, K. D., Kua, Y. T., & Liu, C-H. (2014). The analysis of channel stress induced by CESL in N-MOSFET. 於 Quantum, Nano, Micro Technologies and Applied Researches (頁 235-240). (Applied Mechanics and Materials; 卷 481). https://doi.org/10.4028/www.scientific.net/AMM.481.235

Twu, M-J , Kao, W-C, Lin, KC, Chen, KD, Kua, YT & Liu, C-H 2014, The analysis of channel stress induced by CESL in N-MOSFET. 於 Quantum, Nano, Micro Technologies and Applied Researches. Applied Mechanics and Materials, 卷 481, 頁 235-240, 2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, 新加坡, 13/12/1. https://doi.org/10.4028/www.scientific.net/AMM.481.235

@inproceedings{d0df1b79f2ae4ea6b494dbea0b5d3a5f,

title = "The analysis of channel stress induced by CESL in N-MOSFET",

abstract = "The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.",

keywords = "CESL stressor, Channel stress, Mobility",

author = "Ming-Jenq Twu and Wen-Chung Kao and Lin, {K. C.} and Chen, {K. D.} and Kua, {Y. T.} and Chuan-Hsi Liu",

year = "2014",

month = jan,

day = "16",

doi = "10.4028/www.scientific.net/AMM.481.235",

language = "English",

isbn = "9783037859681",

series = "Applied Mechanics and Materials",

pages = "235--240",

booktitle = "Quantum, Nano, Micro Technologies and Applied Researches",

note = "2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 ; Conference date: 01-12-2013 Through 02-12-2013",

}

TY - GEN

T1 - The analysis of channel stress induced by CESL in N-MOSFET

AU - Twu, Ming-Jenq

AU - Kao, Wen-Chung

AU - Lin, K. C.

AU - Chen, K. D.

AU - Kua, Y. T.

AU - Liu, Chuan-Hsi

PY - 2014/1/16

Y1 - 2014/1/16

N2 - The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.

AB - The strained nitride capping layer(contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study.

KW - CESL stressor

KW - Channel stress

KW - Mobility

UR - http://www.scopus.com/inward/record.url?scp=84891935495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84891935495&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMM.481.235

DO - 10.4028/www.scientific.net/AMM.481.235

M3 - Conference contribution

AN - SCOPUS:84891935495

SN - 9783037859681

T3 - Applied Mechanics and Materials

SP - 235

EP - 240

BT - Quantum, Nano, Micro Technologies and Applied Researches

T2 - 2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013

Y2 - 1 December 2013 through 2 December 2013

ER -